Polytypes of colourless and coloured single crystals of silicon carbide (SiC) grown on SiC substrates by chemical vapour deposition are analyzed utilizing Raman spectroscopy supplemented by scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The SEM analysis with the defect stacking faults, inclusions of defects and their distribution has https://www.facebook.com/permalink.php?story_fbid=pfbid0tgzbP3xvRNr7vz9ugJqxZ6qpW5rJYkaQNiedGwxis84bSqzVZmu65mEhkn4EEZaRl&id=61562415773754&__cft__[0]=AZUrPa6046vl1x5Ftd0n16emkDMeojSzj35m7-jdmqDLTpbX-jZAVM_uwJUldY-XHZ04cAZ6vkYT8gm1B3edr4TeP-Apugz1_-4oH5k3it3N097r57Ozvke5N3NZ60v_2AyVWmIqx2dFIvr0wOUjIISc44eGuRP-V0ExBtxAs2yhT7Ru9DNLZcRk2HWmDM0LShzlX5f-MGd7fLEthGwT_Rxd&__tn__=%2CO%2CP-R